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AC-Transformer-RHB: Logic + ReRAM 3D Chip

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Technology Edges and Chip Highlights

  • By adopting CMOS and ReRAM integrated processes, using AI computing chip stacked with ReRAM memory and architectural innovations, effectively reduced both system power consumption and system cost for large model deployment
  • Leveraging software-hardware co-design technologies tailored for 3D logic-ReRAM stacking in large model architectures—such as near-memory processing, low-bit quantization, and speculative decoding—achieves an external memory access compression rate of 75–80%
  • From 2D to 3D, the global interconnect length of high-density AI computing cores is reduced by more than 50%, while 3D wiring shortens the connection length between ReRAM and compute units by 85%
  • Based on co-design methodology and self-developed toolchains, efficient memory management, dataflow scheduling, and instruction parallelism are achieved on multi-core architectures  
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 Chip Specifications

Process node 55nm LL
Metal stack 1P9M_8Ic_1TMc_ALPA1
Voltage Core: 1.2V; I/O: 2.5V
Data Precision A: INT8/INT16*/INT32*
 W: INT8/INT4
MAC# (in main array) 4,096
Process clock (MHz) 250
Peak performance (TOPS) 2
Equiv. NAND2 gates 10M
SRAM Size 3.4MByte
IPs PLL, ARM M0
Face-to-face bump# 2912
Bonding pads  324
Clock domain 4
Die size 7mm x 8mm
ReRAM Capacity  8MByte
ReRAM Bandwidth  25.6Gbyte/s 
(256byte/cycle @100MHz)
Package Size 23mm x 23mm

AC-Transformer-RHB: Logic + ReRAM 3D Chip